Allgemein
| Gate Charge | 103 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.6 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 25A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 103 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.6 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.3V @ 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 2500 V |
|---|---|
| Current - Collector (Ic) (Max) | 55 A |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 300 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 Variant |
| Hersteller-Gehäuse | PLUS247™-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|