Allgemein
| Gate Charge | 200 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.7 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 42A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 200 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.7 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 42A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
|---|---|
| Current - Collector (Ic) (Max) | 104 A |
| Current - Collector Pulsed (Icm) | 400 A |
| Power - Max | 500 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 Variant |
| Hersteller-Gehäuse | TO-247HV |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|