Allgemein
| Gate Charge | 188 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.32 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 188 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Active |
| Reverse Recovery Time (trr) | 1.32 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 42A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 360 W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247AD |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|