Allgemein
| Gate Charge | 62 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 1.4 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 62 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | IXYS |
| Montageart | Through Hole |
| Product Status | Not For New Designs |
| Reverse Recovery Time (trr) | 1.4 µs |
| Serie | BIMOSFET™ |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 12A |
| Voltage - Collector Emitter Breakdown (Max) | 3000 V |
|---|---|
| Current - Collector (Ic) (Max) | 26 A |
| Current - Collector Pulsed (Icm) | 98 A |
| Power - Max | 125 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | i4-Pac™-5 (3 Leads) |
| Hersteller-Gehäuse | ISOPLUS i4-PAC™ |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|