IXYS Integrated Circuits Division
MOSFET N-CH 415V 5MA SOT-223
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 14Ohm @ 50mA, 350mV |
|---|---|
| Basis-Teilenummer | CPC5603 |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 0 V |
| Hersteller | IXYS Integrated Circuits Division |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Drain-Source-Spannung | 415 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0.35V |
| Current - Continuous Drain (Id) @ 25°C | 5mA (Ta) |
| Max. Verlustleistung | 2.5W (Ta) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SOT-223 |
| Betriebstemperatur | -40°C~85°C(TA) |
|---|