Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 195mOhm @ 10A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF @ 800 V |
| Hersteller | Inventchip |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 2.9V @ 1.9mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Max. Verlustleistung | 138W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-4 |
| Hersteller-Gehäuse | TO-247-4 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|