Allgemein
| Rds On (Max) @ Id, Vgs | 19mOhm @ 33A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |