Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 17mOhm @ 11A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 10µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A (Tc) |
| Max. Verlustleistung | 11.5W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-VDFN Exposed Pad |
| Hersteller-Gehäuse | 6-PQFN (2x2) |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|