IRG8P50N120 - DISCRETE IGBT WITH
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 315 nC |
|---|---|
| Eingangstyp | Standard |
| Hersteller | International Rectifier |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 170 ns |
| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
| Td (on/off) @ 25°C | 35ns/190ns |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 350 W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | TO-247AD |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|