Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 35A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3107 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Drain-Source-Spannung | 75 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Max. Verlustleistung | 99W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hersteller-Gehäuse | D-PAK (TO-252AA) |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|