Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 10 V |
| Hersteller | International Rectifier |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 43A (Tc) |
| Max. Verlustleistung | 2.7W (Ta), 28W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerVDFN |
| Hersteller-Gehäuse | 8-PQFN-Dual (3.3x3.3), Power33 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|