Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 33A, 10V |
|---|---|
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 13 V |
| Hersteller | International Rectifier |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.1V @ 100µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 160A (Tc) |
| Max. Verlustleistung | 2.1W (Ta), 54W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric MX |
| Hersteller-Gehäuse | DIRECTFET™ MX |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|