Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
| Hersteller | International Rectifier |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
| Max. Verlustleistung | 2.2W (Ta), 42W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric SQ |
| Hersteller-Gehäuse | DIRECTFET™ SQ |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|