Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8mOhm @ 52A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Max. Verlustleistung | 130W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Hersteller-Gehäuse | TO-262 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|