Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Max. Verlustleistung | 230W (Tc) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
|---|---|
| Hersteller-Gehäuse | TO-262 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|