Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
| Hersteller | International Rectifier |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | Automotive, AEC-Q101, HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Drain-Source-Spannung | 300 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Max. Verlustleistung | 210W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Hersteller-Gehäuse | PG-TO262-3-901 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|