Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 28A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 60 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | OptiMOS™ 6 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Drain-Source-Spannung | 120 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 62A (Tc) |
| Max. Verlustleistung | 2.5W (Ta), 94W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | PG-TSDSON-8 FL |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
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