Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Channel Type | Independent |
|---|---|
| Driven Configuration | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 70ns, 35ns |
| Current - Peak Output (Source, Sink) | 290mA, 600mA |
|---|---|
| High Side Voltage - Max (Bootstrap) | 200 V |
| Logic Voltage - VIL, VIH | 0.8V, 2.5V |
| Versorgungsspannung | 10V ~ 20V |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Hersteller-Gehäuse | 8-DIP |
| Betriebstemperatur | -40°C~125°C(TJ) |
|---|