Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 50 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Max. Verlustleistung | 79W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Hersteller-Gehäuse | I-PAK |
| Betriebstemperatur | -40°C~175°C(TJ) |
|---|