Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Discontinued at |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Max. Verlustleistung | 1W (Ta) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | SOT-223 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|