Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 50µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 40A (Tc) |
| Max. Verlustleistung | 2.7W (Ta), 37W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-VQFN Exposed Pad |
| Hersteller-Gehäuse | PQFN (3x3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|