Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 8mOhm @ 62A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3445 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 104A (Tc) |
| Max. Verlustleistung | 2.4W (Ta), 167W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Hersteller-Gehäuse | TO-262 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|