Allgemein
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8920 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Not For New Designs |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |