Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 13mOhm @ 8.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 653 pF @ 10 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
| Max. Verlustleistung | 2.1W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-PowerVDFN |
| Hersteller-Gehäuse | 6-PQFN (2x2) (DFN2020) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|