Allgemein
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
|---|---|
| Basis-Teilenummer | IRFHM8363 |
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1165pF @ 10V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |