Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 35mOhm @ 3.8A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Discontinued at |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Max. Verlustleistung | 1.8W (Ta) |
| Gehäuse | Tube |
|---|---|
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Hersteller-Gehäuse | Micro8™ |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|