IRF7421D1PBF

Name: IRF7421D1PBF
Brand: Infineon Technologies

Analog & Leistungselektronik

MOSFET N-CH 30V 5.8A 8SO

Obsolet8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	35mOhm @ 4.1A, 10V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
Hersteller	Infineon Technologies
Montageart	Surface Mount
Product Status	Obsolete
Serie	FETKY™
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1V @ 250µA

Drain-Source-Spannung	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta)
Max. Verlustleistung	2W (Ta)

Betriebstemperatur	-55°C ~ 150°C (TJ)