Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 13 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 37A (Tc) |
| Max. Verlustleistung | 1.8W (Ta), 15W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | DirectFET™ Isometric S1 |
| Hersteller-Gehäuse | DirectFET™ Isometric S1 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|