Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.7A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta), 25A (Tc) |
| Max. Verlustleistung | 3W (Ta), 42W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | DirectFET™ Isometric SJ |
| Hersteller-Gehäuse | DIRECTFET™ SJ |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|