Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 13A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) |
| Max. Verlustleistung | 2.2W (Ta), 42W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | DirectFET™ Isometric SQ |
| Hersteller-Gehäuse | DIRECTFET™ SQ |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|