Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Max. Verlustleistung | 2W (Ta) |
| Gehäuse | Tube |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Hersteller-Gehäuse | Micro6™(TSOP-6) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|