Allgemein
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | HEXFET®, StrongIRFET™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |