Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 20 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount, Wettable Flank |
| Product Status | Active |
| Serie | OptiMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 51µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 205A (Tc) |
| Max. Verlustleistung | 2.5W (Ta), 107W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | PG-TTFN-9-1 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|