Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 650mOhm @ 20A, 10V |
|---|---|
| Basis-Teilenummer | IQE006 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5453 pF @ 12 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | OptiMOS™ 5 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 25 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 298A (Tc) |
| Max. Verlustleistung | 2.1W (Ta), 89W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Hersteller-Gehäuse | IPAK (TO-251AA) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|