Allgemein
| Rds On (Max) @ Id, Vgs | 29mOhm @ 35.8A, 10V |
|---|---|
| Basis-Teilenummer | IPW65R029 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7149 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | CoolMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.79mA |