Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.7A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | CoolMOS™ P7 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 140µA |
| Drain-Source-Spannung | 950 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max. Verlustleistung | 52W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Hersteller-Gehäuse | PG-TO251-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|