Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | CoolMOS™ P7 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Drain-Source-Spannung | 700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Max. Verlustleistung | 17.6W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-251-3 Stub Leads, IPak |
| Hersteller-Gehäuse | PG-TO251-3-347 |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|