Allgemein
| Rds On (Max) @ Id, Vgs | 99mOhm @ 12.5A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2513 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Serie | * |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 630µA |