Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 350mOhm @ 5.6A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 100 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Obsolet |
| Serie | 448 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 370µA |
| Drain-Source-Spannung | 550 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Max. Verlustleistung | 89W (Tc) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
|---|---|
| Hersteller-Gehäuse | PG-TO262-3 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|