IPI120P04P4L03AKSA1

Name: IPI120P04P4L03AKSA1
Brand: Infineon Technologies

Analog & Leistungselektronik

MOSFET P-CH 40V 120A TO262-3

ObsoletTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	3.4mOhm @ 100A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 25 V
Hersteller	Infineon Technologies
Montageart	Through Hole
Product Status	Obsolete
Serie	OptiMOS™
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.2V @ 340µA

Drain-Source-Spannung	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Max. Verlustleistung	136W (Tc)

Gehäuse	Tube