Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | OptiMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA |
| Drain-Source-Spannung | 75 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Max. Verlustleistung | 300W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Hersteller-Gehäuse | PG-TO262-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|