Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 178mOhm @ 13A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Verpackung | Tape & Reel (TR) Cut Tape (CT) |
| Teilestatus | Aktiv |
| Serie | 448 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1.04mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta), 13.9A (Tc) |
| Max. Verlustleistung | 3W (Ta), 83W (Tc) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|---|---|
| Hersteller-Gehäuse | PG-TO252-3 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|