Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1291 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | CoolMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 320µA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Max. Verlustleistung | 77W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | PG-TO263-7-11 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
| Qualification | AEC-Q101 |