Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 5.05mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 50 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | StrongIRFET™ 2 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.8V @ 85µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Max. Verlustleistung | 150W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | PG-TO263-3 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|