Allgemein
| Rds On (Max) @ Id, Vgs | 142mOhm @ 8.9A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 496 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Serie | 448 |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -5V |
| Vgs(th) (Max) @ Id | 5.7V @ 3mA |