Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 60A, 18V |
|---|---|
| Basis-Teilenummer | IMYH200 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 246 nC @ 18 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | CoolSiC™ |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +20V, -7V |
| Vgs(th) (Max) @ Id | 5.5V @ 48mA |
| Drain-Source-Spannung | 2000 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Max. Verlustleistung | 552W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-4 |
| Hersteller-Gehäuse | PG-TO247-4-U04 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|