Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | CoolSiC™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -2V |
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Max. Verlustleistung | 104W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-247-3 |
| Hersteller-Gehäuse | PG-TO247-3-41 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|