Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 217mOhm @ 5.7A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 400 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | CoolSIC™ M1 |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -5V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.7mA |
| Drain-Source-Spannung | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Max. Verlustleistung | 85W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Hersteller-Gehäuse | PG-TO263-7-12 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|