Allgemein
| Rds On (Max) @ Id, Vgs | 468mOhm @ 2A, 18V |
|---|---|
| Basis-Teilenummer | IMBG120 |
| FET Feature | Standard |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.9 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 800 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | CoolSiC™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +18V, -15V |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |