Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1000mOhm @ 1A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 1000 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | CoolSiC™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -10V |
| Vgs(th) (Max) @ Id | 5.7V @ 1.1mA |
| Drain-Source-Spannung | 1700 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V, 15V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Max. Verlustleistung | 68W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Hersteller-Gehäuse | PG-TO263-7-13 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
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